2019 International Conference on Silicon and New Semiconductor Materials was held in Tianjin
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- Time of issue:2022-02-17
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(Summary description)
2019 International Conference on Silicon and New Semiconductor Materials was held in Tianjin
(Summary description)
- Categories:Corporate News
- Author:
- Origin:
- Time of issue:2022-02-17
- Views:0
With the rapid development of integrated circuit and photovoltaic industry, silicon materials as the basis has formed a huge industry in the world, and its technology is still developing. Silicon-based heterogeneous materials, wide band gap materials, two-dimensional materials and other new semiconductor materials are becoming the focus of research and development in the field of semiconductor materials. In order to promote mutual exchanges and cooperation in the field of semiconductor materials at home and abroad, and promote domestic academic research, technological progress and industrial development of silicon and new semiconductor materials, the first International Conference on Silicon and New Semiconductor Materials was held in Tianjin on November 13, 2019.
The conference was jointly sponsored by the Semiconductor Materials Branch of China Electronic Materials Industry Association, the 46th Research Institute of China Electronic Science and Technology Group Corporation, the Key Laboratory of New semiconductor Crystal Materials Technology of China Electronic Science and Technology Group Corporation, and the 46th Research Institute of China Electronic Science and Technology Group Corporation. Dr. Pan Liansheng, chairman and technical leader of Jinzhou Shengong Semiconductor Co., LTD., led the backbone members of the company's technical team to participate in the seminar.
The conference focused on silicon and new semiconductor materials crystal growth and simulation technology, material structure and physical property testing research, related equipment research and development, new device applications, industry and standard development and other topics to carry out a wide range of exchanges. Eighteen experts and scholars from Germany, Japan, Russia, the United States and other semiconductor industry developed countries made a special academic report at the meeting. They included Mr. Thomas Schroeder, Director of the Leibniz Institute for Crystal Growth and Professor at Humboldt University Berlin, former President of the Semiconductor Association of Japan and Masaaki, member of the International Task Force on 300mm silicon wafers Prof. Yamamichi, Academician Yang Deren, academic leader of crystal Growth and simulation technology of Zhejiang University, Dr. Andrey Smirnov of STR in Russia, Mr. John Syring, senior technologist of Linton crystal in the United States, representatives of Rigaku Corporation in Japan and Applied Materials in the United States, etc.
On November 15, the seminar ended successfully, some guests took a group photo, and began to freely visit the semiconductor material industry chain enterprise product exhibition held during the conference.
The conference is a high-level forum for exchange and innovation between the industry, science and research in the field of silicon and new semiconductor materials at home and abroad, and a grand event for academic exchange and information sharing among first-class experts in international semiconductor materials. It is believed that this conference will play a positive role in promoting the academic research, technological progress and industrial development of domestic silicon and new semiconductor materials.
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